Thermal Transient Measurement of High Power Bipolar Transistors: Chances and Challenges




Introduction

Bipolar junction transistors (BJTs) are typical devices in power electronics. Therefore, their thermal characterization is one of the most common tasks in thermal engineering.

Accordingly, thermal measurement standards describe extensively their testing such as

  • environmental conditions
  • powering
  • data acquisition

The two main USA standards focusing on the thermal measurement of BJTs are MIL-STD-750 and JEDEC JESD51. The former concentrates more on the powering of the devices and to some extent the data recording. The latter gives more details on environmental conditions and data acquisition, while powering techniques are rather left to the user’s responsibility. Anyway, no contradiction exists between the standards.

In this paper we demonstrate the realization of the standards by an up-to-date thermal transient tester.

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